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| HiPerFETTM MOSFET Module N-Channel Enhancement Mode VMO 550-01F VDSS = 100 V = 590 A ID25 RDS(on) = 2.1 mW D G E 72873 G S S D KS Preliminary Data KS Symbol VDSS VDGR VGS VGSM ID25 ID80 IDM PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 10 kW Continuous Transient TS = 25C TS = 80C TS = 25C TC = 25C TS = 25C pulse width limited by TJM Maximum Ratings 100 100 20 30 590 440 2360 2200 1470 -40 ...+150 150 -40 ... +125 V V V V A A A W W C C C V~ q q q D = Drain S = Source KS = Kelvin Source G = Gate Features q q 50/60 Hz IISOL 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M6) Terminal connection torque (M5) typical including screws 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 g q International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 3 6 V V q q q q VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 6 mA VDS = 20 V, ID = 110 mA VGS = 20 V DC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 25C TJ = 125C AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers 500 nA 3 mA 12 mA 2.1 mW Advantages q q q q VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % Easy to mount Space and weight savings High power density Low losses 750 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VMO 550-01F Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 330 50 VGS = 0 V, VDS = 25 V, f = 1 MHz 17.6 8.8 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (external) 500 800 200 2000 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 385 940 S nF nF nF ns ns ns ns nC nC nC 0.057 K/W with 30 mm heat transfer paste 0.085 K/W Dimensions in mm (1 mm = 0.0394") 5 gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthJS VDS = 10 V; ID = 0.5 * ID25 pulsed Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 590 2360 0.9 1.2 A A V Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 1000 A/ms, VDS = 0.5 * VDSS 300 ns IXYS MOSFETs and All rights reserved (c) 2000 IXYS IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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